| PART |
Description |
Maker |
| SM050209 SMX0509MR-M1 SMX05012MR-M1 |
CONTROL DEVICES Surface Mount-Melf pin diodes
500 V, SILICON, PIN DIODE
|
Microsemi Corporation
MICROSEMI CORP-LOWELL
|
| BSS73DCSM BSS73DCSM-JQR-A BSS73DCSM-JQR-AG4 |
Dual Bipolar NPN Devices in a hermetically sealed
500 mA, 300 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, MO-041BB
|
Seme LAB
SEMELAB LTD
|
| RKEF090 RKEF300 RKEF250 BBRF550 BBRF5501 RKEF500 R |
PolySwitch Resettable Devices Radial-leaded Devices
Overcurrent Protection Device
|
Tyco Electronics
http://
|
| PJ3100 |
7V; 300mA CMOS LDO with enable. For battery-powered devices, personal communication devices
|
PROMAX-JOHNTON
|
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
| EPC1064 EPC1064V EPC1 EPC1213 EPC1441 EP20K200C EP |
CONFIGURATION DEVICES FOR SRAM-BASED LUT DEVICES
|
Altera Corporation
ETC
|
| SMD250 |
PolySwitch垄莽PTC Devices
PolySwitch?PTC Devices
|
Tyco Electronics
|
| MICROSMD110F |
PolySwitch?PTC Devices
PolySwitch垄莽PTC Devices
|
Tyco Electronics
|
| TSM600-250F-RA |
PolySwitch庐PTC Devices
PolySwitch?PTC Devices
|
Tyco Electronics
|
| TS250-130F-RC-B-0.5-2 |
PolySwitch?PTC Devices
PolySwitch垄莽PTC Devices
|
Tyco Electronics
|
| MZ4624 MZ4619 MZ4626 MZ4620 MZ4623 MZ4616 MZ4622 M |
Zener diode, 500 mW, zener voltage 4.7V
Zener diode, 500 mW, zener voltage 3V
Zener diode, 500 mW, zener voltage 5.6V
Zener diode, 500 mW, zener voltage 3.3V
Zener diode, 500 mW, zener voltage 4.3V
Zener diode, 500 mW, zener voltage 2.2V
Zener diode, 500 mW, zener voltage 3.9V
Zener diode, 500 mW, zener voltage 2.4V
Zener diode, 500 mW, zener voltage 10V
Low voltage avalanche passivated silicon oxide zener regulator diodes, 500 mW, zener voltage 6.8V
500 milliwatts glass silicon zener diode, zener voltage 22V
500 milliwatts glass silicon zener diode, zener voltage 51V
500 mW DO-35 Glass Zener Voltage Regulator Diodes
500 milliwatts glass silicon zener diode, zener voltage 62V
500 milliwatts glass silicon zener diode, zener voltage 33V
Low voltage avalanche passivated silicon oxide zener regulator diodes, 500 mW, zener voltage 8.2V
Zener diode, 500 mW, zener voltage 2V
Zener diode, 500 mW, zener voltage 8.2V
Zener diode, 500 mW, zener voltage 8.7V
Zener diode, 500 mW, zener voltage 9.1V
|
Motorola
|
|
